2011. 8. 30 1/7 semiconductor technical data KGT40N60KDA revision no : 0 general description kec npt trench igbts offer low switching losses, high energy efficiency and short circuit ruggedness. it is designed for applications such as motor control, uninterrupted power supplies(ups), general inverters. features h high speed switching h high system efficiency h short circuit withstand times ! 10us h extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature g c e characteristic symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges ? 20 v collector current @tc=25 ? i c 80 a @tc=100 ? 40 a pulsed collector current i cm * 120 a diode continuous forward current @tc=100 ? i f 40 a diode maximum forward current i fm 80 a maximum power dissipation @tc=25 ? p d 290 w @tc=100 ? 116 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r t h jc 0.43 ? /w thermal resistance, junction to case (diode) r t h jc 1.45 ? /w thermal resistance, junction to ambient r t h ja 40 ? /w thermal characteristic e c g f xx + 9 j + x k q z hw*hjx bjhoxwwwwxh5x u jhxxwwwwxh=x u =xhmjwwwwxh5x u 5hxxwwwwxh=x u =hxxwwwwxh=x u bh=xwwwwxh=x u =xhbxwwwwwxhyx u xhaxwwwwxhx= u =hxxwwwwxhbx u b*hyxwwwwxh=x u =h*xwwwwxh=x u jh*jwwwwxh5x u 5haxwwwwxh5x u 5haxwwwwxh=x u yhbowwwwxhbx u z j 9 b=5 + x k q )=*y f bhwqfx =hwjxj 5hwxx
2011. 8. 30 2/7 KGT40N60KDA revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =250 u 600 - - v collector cut-off current i ces v ge =0v, v ce =600v - - 250 u gate leakage current i ges v ce =0v, v ge = ? 20v - - ? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =250 u 4.5 5.5 7.0 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =40a - 1.80 2.20 v v ge =15v, i c =40a, t c = 125 ? - 2.10 - v v ge =15v, i c =80a, t c = 25 ? - 2.45 - v dynamic total gate charge q g v cc =400v, v ge =15v, i c = 40a - 170 - nc gate-emitter charge q ge - 25 - nc gate-collector charge q gc - 80 - nc turn-on delay time t d(on) v cc =300v, i c =40a, v ge =15v,r g =10 ? inductive load, t c = 25 ? - 50 - ns rise time t r - 40 - ns turn-off delay time t d(off) - 170 - ns fall time t f - 35 - ns turn-on switching loss e on - 0.6 - mj turn-off switching loss e off - 0.4 - mj total switching loss e ts - 1.0 - mj turn-on delay time t d(on) v cc =300v, i c =40a, v ge =15v, r g =10 ? inductive load, t c = 125 ? - 55 - ns rise time t r - 50 - ns turn-off delay time t d(off) - 185 - ns fall time t f - 75 - ns turn-on switching loss e on - 1.2 - mj turn-off switching loss e off - 1.0 - mj total switching loss e ts - 2.2 - mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 3200 - pf ouput capacitance c oes - 200 - pf reverse transfer capacitance c res - 100 - pf short circuit withstand time t sc v cc =300v, v ge =15v, t c =100 ? 10 - - s marking note 1 : energy loss include tail current and diode reverse recovery. 2 device mark 1 device mark 2 3 lot no 1 kgt 40n60kda 025
2011. 8. 30 3/7 KGT40N60KDA revision no : 0 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 40a t c =25 ? - 1.8 2.3 v t c =125 ? - 1.5 - diode reverse recovery time t rr i f = 40a di/dt = -600a/ s t c =25 ? - 90 - ns t c =125 ? - 105 - diode peak reverse recovery current i rr t c =25 ? - 16 - a t c =125 ? - 29 - diode reverse recovery charge q rr t c =25 ? - 730 - nc t c =125 ? - 1550 -
2011. 8. 30 4/7 KGT40N60KDA revision no : 0 fig 1. saturation voltage characteristics collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) 34 2 1 0 collector current i c (a) collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector current i c (a) 0 20 16 12 4 8 08 20 41216 0246810 0 20 40 60 80 100 120 200 140 160 180 40 30 20 10 70 100 90 80 60 50 0 050 2.0 1.5 2.5 3.5 3.0 100 150 case temperature t c ( ) c 1 10 100 capacitance (pf) 0 4500 4000 3500 3000 2500 2000 1500 1000 500 5000 fig 2. saturation voltage characteristics fig 3. saturation voltage vs. case temperature fig 4. saturation voltage vs. v ge fig 5. saturation voltage vs. v ge fig 6. capacitance characteristics common emitter v ge = 15v t c = t c = 25 c 125 c common emitter v ge = 15v 20v 12v 15v 10v i c = 80a i c = 40a common emitter t c = 25 c i c = 20a collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector - emitter voltage v ce (v) 0 20 16 12 4 8 08 20 41216 common emitter t c = 125 c c i c = 20a 60a ciss coss crss 40a t c =25 c common emitter 60a 40a common emitter v ge = 0v, f = 1mhz t c = 25
2011. 8. 30 5/7 KGT40N60KDA revision no : 0 collector current i c ( ) switching time (ns) 010 60 40 50 30 20 100 10 tr td(on) fig 10. turn-on characteristics vs. collector curren t collector current i c ( ) switching time (ns) fig 11. turn-off characteristics vs. collector current gate resistance r g ( ? ) switching loss (mj) fig 9. switching loss vs. gate resistance collector current i c ( ) switching loss (mj) 01020 60 40 50 30 0.1 10 1 fig 12. switching loss vs. collector current fig 7. turn-on characteristics vs. gate resistance gate resistance r g ( ? ) gate resistance r g ( ? ) switching time (ns) switching time (ns) 0 204060 10 30 50 10 1000 100 tr td(on) 0204060 10 30 50 10 100 1000 tf td(off) fig 8. turn-off characteristics vs. gate resistance 0204060 10 30 50 0.1 1 10 51020 60 40 50 30 10 100 1000 common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c common emitter v cc = 300v, v ge = 15v i c = 40a t c = 25 t c = c 125 c common emitter v cc = 300v, v ge = 15v i c = 40a t c = t c = c 125 c common emitter v cc = 300v, v ge = 15v i c = 40a t c = t c = c 125 c 25 25 e(on) e(off) tf td(off) common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c e(on) e(off)
2011. 8. 30 6/7 KGT40N60KDA revision no : 0 fig 13. gate charge characteristics gate charge q g ( nc ) gate-emitter voitage v ge (v) 0 200 100 150 50 250 0 4 2 6 10 8 16 14 12 18 20 common emitter i c = 40 t c = 25 c fig 14. soa characteristics fig 16. transient thermal impedance of igbt 400v 600v vcc = 200v rectan g ular pulse duration (sec) 1 1e-5 1e-4 1e-3 1e-2 1e-1 1e+00 1e+01 thermal resistance (zthjc) 0.001 0.1 0.01 duty=0.5 0.2 0.1 0.05 0.02 0.01 single pluse collector current i c (a) collector-emitter voltage v ce (v) 10 1 0.01 1 0.1 0.1 100 1000 10 100 1000 10000 1ms 200 s 50 s single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature c 10ms dc operation 1. duty factor d=t1/t2 2. peak tj = pdm zthjc + t c t 1 t 2 p dm 1 100 10 1000 1 100 10 1000 fig 15. turn-off soa collector current i c (a) collector-emitter voltage v ce (v) turn-off safe operating area v ge = 15v, t c = 125 c
2011. 8. 30 7/7 KGT40N60KDA revision no : 0 fig 17. forward characteristics forward voltage v f (v) forward current i f (a) forward current i f (a) reverse recovery current i rrm (a) reverse recovery time t rr (ns) forward current i f (a) 04080 20 60 100 0 20 25 35 30 15 5 10 fig 18. reverse recovery current fig 19. reverse recovery time di/dt=400a/ s di/dt=600a/ s 04080 20 60 100 0 140 120 80 60 40 20 100 01 3 24 0.1 1 100 1000 10 t c = 25 c t c = 125 c 25 c 125 c 25 c 125 c di/dt=400a/ s di/dt=600a/ s
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